Mosfet K4145



Simple MOSFET measurements with the 4155parameter analyzer

In a first attempt at measuring a MOSFET, you probably would liketo see a family of drain current vs. drain voltage curves, and thenwould like to extract the parameters VT, K, and lambdathat could be used as the starting point of a level 2 MOSFET model.Of course, there are a variety of ways to extract parameters. Thetutorial below describes one relatively simple approach. You willhave to make two separate measurements in order to get all threeparameters. The first measurement obtains a conventional family ofiD vs VDS curves, and from these you can easilyfind lambda. The second measurement involves plotting the square-rootof the drain current vs. the gate voltage in the saturation region.If you assume the MOSFET has textbook square-law behavior, the draincurrent is given by

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.

Taking the square-root of both sides gives

,

K4145 mosfet datasheet

so that a plot of the square-root of iD vs.vGS will look like Fig. 1 below.

Figure 1.

With this type of plot, you can easily extract the thresholdvoltage (x-intercept) and the K-parameter (square of the slope).

The instructions below describe the details of setting the 4145 todo MOSFET measurements and extracting parameters from the measureddata. The instructions assume that you are measuring an n-channelenhancement-mode MOSFET. The numbers used must be adjusted if you aremeasuring a PMOS or an depletion-mode device.

Note: In the below, there are buttons on the front panel and thereare 'soft keys' around the display. The function of the soft keyschanges as the display changes.

Step 1 - Obtaining iD vs vDS curves andextracting lambda

K4145 mosfet datasheet
  • Setting up and obtaining the data
    1. Go to the CHANNELS page using the CHAN button on the front panel. Push the soft key (MEM2 FET VDS-ID) that brings up the standard setup for a FET. This puts the 4155 into a configuration for measuring iD vs. vDS for FETs. Connect the drain, source, and gate of your MOSFET to the prescribed SMUs (SMU1 to source, SMU2 to drain, SMU3 to gate).
    2. Next, go to the MEASURE page (user either the front panel 'Meas' button or press the 'NEXT PAGE' soft key twice). to define the voltage and current ranges to be used. As a reasonable starting point, you might have the drain voltage range from 0 to 10V in 0.1V increments. The current compliance on the drain can be set to 25mA. Let the gate voltage step in 0.5V increment from 0 to 5V. The current compliance for the gate can be set to something small, like 1 µA.
      Note: The first push of the 'NEXT PAGE' softkey takes you to a page where you can define your own functions for plotting. You don't need this for the iD - VDS measurement, but we will make use of a function in the second part.
      Note 2: In entering the measurement parameters for the VAR1 (VDS) you should specify the start voltage, the stop voltage and the size of the step. The 4155 will calculate the number of steps to be used in the sweep. For VAR2 (VGS) you should provide the start voltage, the step size, and the number of steps. The 4155 will determine the final voltage. It seems mildly crazy to have to specify VAR1 and VAR2 in different fashions, but that's the way it is.
      Jump over to the 'Sweep' box and change the setting there to 'CONTINUE AT ANY'. This change is made by using the soft key in the upper right corner of the screen.
      The measurement page should look something like this:

      • VARIABLE

      VAR1

      VAR2

      UNIT
      NAME
      SWEEP MODE
      LIN/LOG
      START
      STOP
      STEP
      NO OF STEP
      COMPLIANCE
      POWER COMP

      SMU2:HR
      VDS
      SINGLE
      LINEAR
      0.0000 V
      10.000 V
      100.0mV
      101
      25.00mA
      OFF

      SMU1:HR
      VG
      SINGLE
      LINEAR
      0.0000 V
      5.000 V
      500.0mV
      11
      1.000uA
      OFF


      • TIMING

      HOLD TIME

      0.0000 s

      DELAY TIME

      0.0000 s

      •Sweep
      CONTINUE AT ANY

      • CONSTANT

      UNIT
      NAME
      MODE
      SOURCE
      COMPLIANCE


      - - - - - - - - - -
      - - - - - - - - - -


      - - - - - - - - - -
      - - - - - - - - - -


      - - - - - - - - - -
      - - - - - - - - - -


    3. Now advance to the DISPLAY page. (Use either the 'Display' front panel button or 'NEXT PAGE' softkey). You can have the measured data displayed in the form of a graph or as list of measured values. The default is the graph -- leave it that way for now. Set up the graphics plot so that vDS ranges from 0 to 10V and iD ranges from 0 to 10 mA. (You may have to come back to this page to resize the graph later if needed.)
    4. Advance to the GRAPH/LIST page. (Again, use either the front panel 'Graph/List' button or the 'NEXT PAGE' softkey.) This is the page where the measurements are done. To the right on the front panel is a button marked 'SINGLE'. Push this to have the 4155 to start sweeping through the voltages and measuring the currents. You should see lines sweeping across the graph. If everything is hooked up correctly, these should be the familiar family of MOSFET curves. If all the lines are overlapping on what appears zero current, you might have to rescale the plot. Do this by hitting the 'SCALE' soft key below the screen and then hitting the 'AUTO SCALE' soft key that appears on the right side of the screen.
    5. You might want to save the data to disk before proceeding.


  • Extracting lambda
  1. You can determine lambda for the MOSFET using the line features of the 4155. The sequence of steps is as follows:
    1. Push the MARKER/CURSOR softkey at the bottom of the screen to bring up the marker and cursor softkey controls on the side of the screen. (They may already be there.)
    2. Turn on the marker by pushing the 'MARKER' soft key. (It will switch from MARKER OFF to MARKER ON). The marker can be moved through the data using the dial. The marker starts at the first voltage of the first sweep and moves sequentially through all the data until it gets to the last voltage setting of the last sweep. You can make the marker hop directly to a new sweep by pushing the 'MARKER SKIP' softkey. Move the marker to the saturation region of one of the middle sweeps.
    3. Push the 'LINE' soft key at the bottom of the screen. This brings up the line control soft keys at the side of the screen.
    4. Push the 'CURSOR TO MARKER' soft key. A set of short cross-hairs will move to the point where the marker is located.
    5. Push the' 'LINE soft key on the side of the screen. (It will switch from LINE OFF to LINE ON.) This draws a vertical line through the point where the marker and cursor are located.
    6. Use the dial to move the cursor to a new point on the saturation part of the same curve.
    7. Push the 'CURSOR TO MARKER' soft key again. A second cursor is placed at the new marker location, and the line is redrawn so that it passes through the both the old cursor location and the new cursor location.

    The line that you have drawn should be right on top of the saturation region portion of the iD vs vDS curve. On the graph should be some information about the slope (grad) of the line and the x- and y-axis intercepts. You can use this info to determine lambda.

    You might want to measure lambda for several curves, (i.e. for different at least two different values of gate voltage) and take an average value.

Step 2 - extracting VT and K

  • Setting up and obtaining the data
    1. Use the Chan front panel button to step back to the CHANNELS page. You do not need to change the connections to the MOSFET terminals or the names or the modes, but you do need to make changes to the SMU FCTNs. Make the following changes:
      1. Change the function of SMU2 (VDS) to CONST.
      2. Change the function of SMU3 (VG) to VAR1.

      The CHANNELS page should now a table that looks something like the one below.

      MEASURE

      STBY

      UNIT

      VNAME

      INAME

      MODE

      FCTN

      SMU1:HR
      SMU2:HR
      SMU3:HR
      SMU4:HR
      VSU1
      VSU2
      VMU1
      VMU2

      VS
      VDS
      VG
      VSUB

      IS
      ID
      IG
      ISUB
      - - - - - - - -
      - - - - - - - -
      - - - - - - - -
      - - - - - - - -

      COMMON
      V
      V
      COMMON

      CONST
      CONST
      VAR1
      CONST
      - - - - - - - -
      - - - - - - - -


    2. Use the 'NEXT PAGE' soft key to step to the USER FUNCTION page. Here, you can enter your own function to to be measured. Of course, what we want is the square root of the drain current.
      Enter a user function in the first row of the table. You can call it SQRTID (or some such thing - the name is irrelevant), skip the units (also irrelevant), and type in SQRT(ID) in the expression column.

      Name

      UNIT

      DEFINITION

      SQRTID


      SQRT(ID)





    3. Push the 'NEXT PAGE' soft key to go on to the MEASURE page. Set up the page to look something like the table below.

      • VARIABLE

      VAR1

      VAR2

      UNIT
      NAME
      SWEEP MODE
      LIN/LOG
      START
      STOP
      STEP
      NO OF STEP
      COMPLIANCE
      POWER COMP

      SMU2:HR
      VG
      SINGLE
      LINEAR
      0.0000 V
      5.000 V
      50.0mV
      101
      1.0000mA
      OFF


      • TIMING

      HOLD TIME

      0.0000 s

      DELAY TIME

      0.0000 s


      • CONSTANT

      UNIT
      NAME
      MODE
      SOURCE
      COMPLIANCE

      SMU2:HR
      VDS
      V
      8.000 V
      10.000mA


      - - - - - - - - - -
      - - - - - - - - - -


      - - - - - - - - - -
      - - - - - - - - - -


      You are programming the 4155 to sweep through a range of gate voltages while keeping the drain voltage constant. Using the numbers from the above table as an example, the gate voltage would sweep from 0 to 5V, while the drain voltage is held constant at 8V. Remember to set the compliances at reasonable values.

      Important measurement note: The values used above are purely for illustration. The numbers you use in your measurement will depend on the particular device your are measuring. The gate must sweep through a range that includes the threshold voltage. For instance, if you were measuring an depletion-mode NMOS transistor, where the threshold voltage is negative, the gate voltage range would have to start at value more negative than the threshold. Or, if measuring a PMOS transistor, all the voltages would have to be negative. Also, in setting the constant drain voltage, you must make certain that the MOSFET will stay in saturation. You will be safe as long as you choose the constant drain voltage to be bigger than any applied gate voltage. After taking a measurement, you might find it necessary to return to this page to adjust the settings, and then measure again.

    4. Move ahead to the DISPLAY page.
      Set up the graph so that the gate voltage will be on the x-axis and your user-defined function, SQRTID (or whatever), will be on the Y1 axis. These are entered using the soft keys. To find your SQRTID function, you must push the 'MORE 1/2' to go to the next menu of soft keys. SQRTID will show up there.
      • GRAPHICS

      X axis

      Y1 axis

      Y2 axis

      NAME
      SCALE
      MIN
      MAX

      VG
      LINEAR
      0.0000 V
      5.000 V

      SQRTID
      LINEAR
      0.0000
      1.0000



    5. Advance to the GRAPH/LIST page and push the SINGLE measurement button to take the measurement. It may be necessary use 'SCALE' and 'AUTO SCALE' to make the graph fit the data. You should see something like Fig. 1 above.
  • Extracting VT and K
    Once you have the graph in hand, determining the parameters is simply a matter of fitting a line to the sloping portion of the curve. Follow the procedure described above for creating a line and fitting it to a portion of the curve. The x-intercept and slope of the fitted line are given in the table at the bottom of the display.
    At this point you might want to save a copy of your data.
    Measurement note: For some MOSFETs the plot of the square-root of iD is sublinear (meaning that it is not a straight line, but bends down at higher gate voltages). This is an indicator that the simple level 1 model for the MOSFET will probably not provide a very good description of the real MOSFET's behavior. When trying to find the threshold voltage for a MOSFET that displays this type of behavior, try to fit the straight line at lower gate voltages - just slightly above threshold. If you use higher gate voltages - in the region where the curve is bending - the extracted threshold voltage will be unreasonably low and perhaps even negative.

Saving data todisk

K4145 Mosfet Equivalent

Mosfet K4145

You can save your 4155 data on a PC formatted floppy and then makeplots using EXCEL (or other graphing program).

From the Graph/List: Graph page (the one with your curvesplotted)

  1. Insert a disk into the drive.
  2. Press the Graph/List button to display the data in a table.
  3. Press the Spreadsheet soft key to enter the save mode.
  4. Enter a name for your data file (do not use an extension, .txt will be appended automatically by the 4155)
  5. Make sure the OUTPUT DATA indicates from 1 to MAX, otherwise press the ALL softkey. This ensures that all data points will be saved. Alternatively, you can use this feature to save only a portion of your data.
  6. Arrow over to delimiter and enter the delimiter you want. MS Excel will work with any, so you can leave it SPACE if you want.
  7. Press the 'EXECUTE' soft key to save the data.

Note: If the data includes multiple sweeps, the 4155 will stillsave them in two columns. Each set of data will follow the last asdepicted below:

X(sweep1) Y(sweep1)

. .

. .

X(sweep2) Y(sweep2)

. .

. .

and so on. So you may need to massage the columns for Excel toconsider them as multiple series.

K4145 Mosfet Datasheet

Gary Tuttle & Rodney Estwick, 2000

K4145 Datasheet PDF - NEC

Part NumberK4145
Description2SK4145
Manufacturers NEC 
Logo

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MOS FIELD EFFECT TRANSISTOR
SWITCHING
DESCRIPTION
The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Low on-state resistance
Low input capacitance
ORDERING INFORMATION
LEAD PLATING
2SK4145-S19-AY Note
Tube 50 p/tube
Note Pb-free (This product does not contain Pb in the external electrode).
TO-220 typ. 1.9 g
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
ID(DC)
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Energy Note2
IAS
60
±84
84
150
32
V
A
W
°C
A
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
Channel to Case Thermal Resistance
Rth(ch-C)
1.49
°C/W
The information in this document is subject to change without notice. Before using this document, please
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Date Published June 2007 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an '<R>' in the PDF file and specifying it in the 'Find what:' field.


CHANNEL TEMPERATURE
VGS = 10 V
16
8
0
Pulsed
Tch - Channel Temperature - °C
1000
100
td(on)
10
VGS = 10 V
1
1
10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
100
VGS = 10 V
10
0.1
Pulsed
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
Ciss
Coss
f = 1 MHz
0.1
Crss
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
30 V
40
8
20 4
0
VDS 2
0
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
100
di/dt = 100 A/μs
1
10
100
5


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Transistor Mosfet K4145

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